Plasma Dicing Protection Coating

Plasma dicing removes wafer boundary materials in a plasma dry etching environment using reactive gases (typically SF₆ / CF₄).
Since no mechanical stress is applied during plasma dicing, it effectively reduces chipping, micro-cracks, thermal damage, and edge breakage,
providing significant advantages for ultra-thin wafers (<50 μm) and high-brittleness materials such as Si, SiC, GaAs, and glass.